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SPN4812 Dataheets PDF



Part Number SPN4812
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN4812 DatasheetSPN4812 Datasheet (PDF)

SPN4812 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Syn.

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SPN4812 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control FEATURES  100V/12A,RDS(ON)=12mΩ@VGS=10V  100V/10A,RDS(ON)=15mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/27 Ver 2 PART MARKING Page 1 SPN4812 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4812S8RGB SOP-8 ※ SPN4812S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Energy, Single Pulse (L=0.1mH , Tc=25℃) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient (steady state) Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJC RθJA Part Marking SPN4812 Typical 100 ±20 12 8 60 22 3.1 2.2 -55/150 -55/150 0.85 75 Unit V V A A mJ W ℃ ℃ ℃/W 2020/03/27 Ver 2 Page 2 SPN4812 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Gate Resistance Diode Forward Voltage Dynamic Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS RDS(on) gfs RG VDS=0V,VGS=±20V VDS=100V,VGS=0V TJ=25℃ VDS=100V,VGS=0V TJ=100℃ VGS=10V,ID=12A VGS=4.5V,ID=10A VDS=5V,ID=12A VGS=0V,VDS=Open, f=1MHz VSD IS=12A,VGS=0V Qg(10V) Qg(4.5V) VDS=50V,VGS=10V Qgs ID=14A Qgd Ciss Coss VDS=50V,VGS=0V f=1MHz Crss td(on) tr td(off) VDD=50V, ID=14A,VGS=10V RG=10Ω tf Min. Typ Max. Unit 100 V 1.4 1.9 2.4 ±100 nA 1 uA 100 9.5 11.5 12 15 mΩ 45 S 1.5 Ω 0.9 1.2 V 29 14 nC 5 5 2275 162 pF 7.9 8 3 nS 26 4 2020/03/27 Ver 2 Page 3 SPN4812 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/27 Ver 2 Page 4 SPN4812 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTE.


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