Document
SPN4810
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4810 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS DC/DC Converter Load Switch Synchronous Buck Converter SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control
FEATURES 100V/14A,RDS(ON)=8.5mΩ@VGS=10V 100V/10A,RDS(ON)=10.5mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
PIN CONFIGURATION(SOP–8)
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PART MARKING
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SPN4810
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN4810S8RGB
SOP-8
※ SPN4810S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Avalanche Energy, Single Pulse (L=0.1mH , Tc=25℃)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient (t≦10S) Thermal Resistance-Junction to Ambient (steady state)
Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJA
Part Marking SPN4810
Typical 100
±20 14 8.9 80
80 3.1 2.2 -55/150 -55/150 40 75
Unit V V A A mJ W ℃ ℃
℃/W
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SPN4810
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Forward Transconductance Gate Resistance Diode Forward Voltage Dynamic Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS
IDSS
RDS(on) gfs RG
VDS=0V,VGS=±20V
VDS=80V,VGS=0V TJ=25℃ VDS=80V,VGS=0V TJ=100℃ VGS= 10V,ID=14A VGS=4.5V,ID=10A
VDS=5V,ID=14A
VGS=0V,VDS=Open, f=1MHz
VSD IS=14A,VGS =0V
Qg(10V)
Qg(4.5V) VDS=50V,VGS=10V Qgs ID=14A
Qgd
Ciss
Coss
VDS=50V,VGS=0V f=1MHz
Crss
td(on)
tr td(off)
VDD=50V, ID=14A,VGS=10V RG=10Ω
tf
Min. Typ Max. Unit
100 V
1.4 1.9 2.4 ±100 nA
1 uA
100
7.1 8.4
8.5 10.5
mΩ
70
S
1.5
Ω
0.9 1.2 V
49
21 nC
8
7
3350
270
pF
15
10
5 nS
32
6
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SPN4810
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4810
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4810
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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