N-Channel Enhancement Mode MOSFET
The SPN8810 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
Synchronous Buck Converter
SMPS Secondary Side Synchronous Rectifier
Super high density cell design for extremely low
Exceptional on-resistance and maximum DC
PPAK5x6-8L package design
2018/3/01 Ver 1