SPN8810
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8810 is the N-Channel logic enhancement mode power field e...
SPN8810
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8810 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS DC/DC Converter Load Switch Synchronous Buck Converter SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control
FEATURES
100V/74A,RDS(ON)=8.0mΩ@VGS=10V 100V/74A,RDS(ON)=10.5mΩ@VGS=4.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability PPAK5x6-8L package design
PIN CONFIGURATION(PPAK5x6-8L)
2023/07/13 Ver 4
PART MARKING Page 1
SPN8810
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number SPN8810DN8RGB
Package PPAK5x6-8L
※ SPN8810DN8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current
TA=25℃ TA=100℃
Avalanche Energy, Single Pulse (L=0.4mH , Tc=25℃)
Power Dissipation Operating Junction Temperature
TA=25℃
Storag...