SPN68T10

SPN68T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN68T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control FEATURES  100V/68A,RDS(ON)=14mΩ@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L and TO-252-2L package design PIN CONFIGURATION TO-220-3L TO-252-2L PART MARKING 2020/04/30 Ver 2 Page 1 SPN68T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN68T10T220TGB TO-220-3L SPN68T10T252RGB TO-252-2L ※ SPN68T10T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN68T10T252RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current TC=25℃ TC=70℃ Power Dissipation@ TC=25℃ Avalanche Energy with Single Pulse ( Tj=25℃,...