Document
SPN120T15
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN120T15 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control
FEATURES 150V/120A, RDS(ON)=10.5mΩ@VGS=10V High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current
capability TO-220-3L/TO-220F-3L package design
PIN CONFIGURATION
TO-220
TO-220F
PART MARKING
2020/05/11 Ver 3
Page 1
SPN120T15
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN120T15T220TGB
TO-220-3L
SPN120T15T220FTGB
TO-220F-3L
※ SPN120T15T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN120T15T220FTGB : Tube ; Pb – Free ; Halogen - Free
Part Marking
SPN120T15 SPN120T15
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TC=25℃ TC=100℃
Avalanche Energy, Single Pulse @ L=1mH, TC=25℃ Power Dissipation @ TC=25℃
Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case
Symbol VDSS VGSS
ID
IDM EAS PD TJ TSTG RθJA RθJC
Typical 150
±20 120 85 400
540 333 -55/175 -55/175 60 0.45
Unit V V
A
A mJ W ℃ ℃ ℃/W ℃/W
2020/05/11 Ver 3
Page 2
SPN120T15
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V VDS=150V,VGS=0V
IDSS TJ=25℃ VDS=150V,VGS=0V TJ=100℃
RDS(on) VGS=10V,ID=20A
Forward Transconductance Gate Resistance Diode Forward Voltage
gfs VDS=5V,ID=20A
RG
VGS=0V,VDS=Open, f=1MHz
VSD IS=20A,VGS=0V
Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=75V,VGS=10V ID=20A
VDS=75V,VGS=0V f=1MHz
VDD=75V,VGS=10V ID=20A, RG=10Ω
Min. Typ Max. Unit
150
V
2.0
4.0
±100 nA
1 uA
100
8.8 10.5 mΩ
90
S
0.7
Ω
0.9 1.2 V
66
11
nC
24
4770
340
pF
92
17
56 nS
30
28
2020/05/11 Ver 3
Page 3
SPN120T15
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/05/11 Ver 3
Page 4
SPN120T15
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/05/11 Ver 3
Page 5
SPN120T15
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
© The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com
2020/05/11 Ver 3
Page 6
.