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SPN120T15 Dataheets PDF



Part Number SPN120T15
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN120T15 DatasheetSPN120T15 Datasheet (PDF)

SPN120T15 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN120T15 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switch.

  SPN120T15   SPN120T15


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SPN120T15 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN120T15 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  150V/120A, RDS(ON)=10.5mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L package design PIN CONFIGURATION TO-220 TO-220F PART MARKING 2020/05/11 Ver 3 Page 1 SPN120T15 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN120T15T220TGB TO-220-3L SPN120T15T220FTGB TO-220F-3L ※ SPN120T15T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN120T15T220FTGB : Tube ; Pb – Free ; Halogen - Free Part Marking SPN120T15 SPN120T15 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=100℃ Avalanche Energy, Single Pulse @ L=1mH, TC=25℃ Power Dissipation @ TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJA RθJC Typical 150 ±20 120 85 400 540 333 -55/175 -55/175 60 0.45 Unit V V A A mJ W ℃ ℃ ℃/W ℃/W 2020/05/11 Ver 3 Page 2 SPN120T15 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=150V,VGS=0V IDSS TJ=25℃ VDS=150V,VGS=0V TJ=100℃ RDS(on) VGS=10V,ID=20A Forward Transconductance Gate Resistance Diode Forward Voltage gfs VDS=5V,ID=20A RG VGS=0V,VDS=Open, f=1MHz VSD IS=20A,VGS=0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=75V,VGS=10V ID=20A VDS=75V,VGS=0V f=1MHz VDD=75V,VGS=10V ID=20A, RG=10Ω Min. Typ Max. Unit 150 V 2.0 4.0 ±100 nA 1 uA 100 8.8 10.5 mΩ 90 S 0.7 Ω 0.9 1.2 V 66 11 nC 24 4770 340 pF 92 17 56 nS 30 28 2020/05/11 Ver 3 Page 3 SPN120T15 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/11 Ver 3 Page 4 SPN120T15 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/11 Ver 3 Page 5 SPN120T15 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/05/11 Ver 3 Page 6 .


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