SPN120T15

SPN120T15 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN120T15 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  150V/120A, RDS(ON)=10.5mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L package design PIN CONFIGURATION TO-220 TO-220F PART MARKING 2020/05/11 Ver 3 Page 1 SPN120T15 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN120T15T220TGB TO-220-3L SPN120T15T220FTGB TO-220F-3L ※ SPN120T15T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN120T15T220FTGB : Tube ; Pb – Free ; Halogen - Free Part Marking SPN120T15 SPN120T15 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=100℃ Avalanche Energy, Single Pulse @ L=1mH, TC=25℃ Power Dissipation @ TC=...