SPP1307
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1307 is the P-Channel enhancement mode power field effect ...
SPP1307
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1307 is the P-Channel enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
FEATURES P-Channel
-30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.50Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-323 (SC-70-3L) package design
PIN CONFIGURATION(SOT-323/SC-70-3L)
PART MARKING
2022/9/28 Ver.3
Page 1
SPP1307
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPP1307S32RGB
SOT-323
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP1307S32RGB : Tape Reel ; Pb – Free ; Halogen – Free
Part Marking 7A
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
...