SPN1306
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN1306 is the N-Channel enhancement mode power field effect ...
SPN1306
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN1306 is the N-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES N-Channel
30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-323 package design
PIN CONFIGURATION( SOT-323 )
PART MARKING
2022/9/23 Ver.4
Page 1
SPN1306
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPN1306S32RGB
SOT-323
※ SPN1306S32RGB : Tape Reel ; Pb – Free ; Halogen – Free ; 3K/Reel
Part Marking 6A
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate –Source Voltage
VGSS
±12
V
Cont...