SPN7002V

SPN7002V N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002V is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability. Direct Logic-Level Interface: TTL/CMOS  Battery Operated Systems  Solid-State Relays FEATURES  60V/0.50A , RDS(ON)=4.0Ω@VGS=10V  60V/0.30A , RDS(ON)=5.0Ω@VGS=5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-523 (SC-89) package design PIN CONFIGURATION (SOT-523 / SC-89) PART MARKING 2020/04/15 Ver 3 Page 1 SPN7002V N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN7002VS52RGB SOT-523 ※ SPN7002VS52RGB : Tape Reel ; Pb – Free; Halogen – Free Part Marking 2V ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate ...