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SPN7002V Dataheets PDF



Part Number SPN7002V
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN7002V DatasheetSPN7002V Datasheet (PDF)

SPN7002V N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002V is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications .

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SPN7002V N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002V is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability. Direct Logic-Level Interface: TTL/CMOS  Battery Operated Systems  Solid-State Relays FEATURES  60V/0.50A , RDS(ON)=4.0Ω@VGS=10V  60V/0.30A , RDS(ON)=5.0Ω@VGS=5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-523 (SC-89) package design PIN CONFIGURATION (SOT-523 / SC-89) PART MARKING 2020/04/15 Ver 3 Page 1 SPN7002V N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN7002VS52RGB SOT-523 ※ SPN7002VS52RGB : Tape Reel ; Pb – Free; Halogen – Free Part Marking 2V ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate –Source Voltage - Continuous VGSS Gate –Source Voltage - Non Repetitive ( tp < 50μs) VGSS Continuous Drain Current(TJ=150℃) TA=25℃ ID Pulsed Drain Current () IDM Power Dissipation Operating Junction Temperature TA=25℃ PD TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA () Pulse width limited by safe operating area Typical 60 ±20 ±40 0.35 1.0 0.15 -55 ~ 150 -55 ~ 150 830 Unit V V V A A W ℃ ℃ ℃/W 2020/04/15 Ver 3 Page 2 SPN7002V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Source-drain Current Source-drain Current (pulsed) Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=48V,VGS=0V IDSS VDS=48V,VGS=0V TJ=55℃ RDS(on) VGS=10V,ID=0.50A VGS= 5V,ID=0.30A ISD ISDM (2) Gfs(1) VDS = 10 V, ID = 0.5 A VSD(1) VGS = 0 V, IS = 0.12A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDD=30V, ID=1A, VGS=5V Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss VDS=25V, f=1MHz, VGS=0 Crss Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD=30V, ID=0.5A RG=4.7Ω ,VGS=4.5V (1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Min. Typ M.


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