SPN1072
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN1072 is the N-Channel enhancement mode power field effect ...
SPN1072
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN1072 is the N-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-723 package design
PIN CONFIGURATION( SOT-723 )
PART MARKING
2022/9/26 Ver.7
Page 1
SPN1072
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPN1072S72RGB
SOT-723
※ SPN1072S72RGB : Tape Reel ; Pb – Free ; Halogen – Free
Part Marking 2
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate –Source Voltage
VGSS
±12
V
Continuous Drai...