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SPP1073 Dataheets PDF



Part Number SPP1073
Manufacturers SYNC POWER
Logo SYNC POWER
Description P-Channel MOSFET
Datasheet SPP1073 DatasheetSPP1073 Datasheet (PDF)

SPP1073 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1073 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-.

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SPP1073 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1073 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  P-Channel -30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  ESD protected  SOT-723 package design PIN CONFIGURATION( SOT-723 ) PART MARKING 2022/09/28 Ver.4 Page 1 SPP1073 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP1073S72RGB SOT-723 ※ SPP1073S72RGB : Tape Reel ; Pb – Free, Halogen – Free Part Marking 3 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate –Source Voltage VGSS ±12 V TA=25℃ -0.45 Continuous Drain Current(TJ=150℃) ID A TA=80℃ -0.35 Pulsed Drain Current IDM -1.0 A Continuous Source Current(Diode Conduction) IS -0.3 A Power Dissipation TA=25℃ 0.27 PD W TA=70℃ 0.16 Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ 2022/09/28 Ver.4 Page 2 SPP1073 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Turn-Off Time V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS VDS=0V,VGS=±12V VDS=-24V,VGS=0V IDSS VDS=-24V,VGS=0V TJ=55℃ ID(on) VDS≤ -4.5V,VGS =-5V RDS(on) gfs VGS=-4.5V,ID=-0.45A VGS=-2.5V,ID=-0.35A VGS=-1.8V,ID=-0.25A VDS=-10V,ID=-0.25A VSD IS=-0.15A,VGS=0V Qg Qgs Qgd td(on) tr td(off) tf VDS=-10V,VGS=-4.5V ID=-0.6A VDD=-10V,RL=10Ω ID=-0.4A VGEN=-4.5V,RG=6Ω Min. Typ Max. Unit -30 -0.35 -0.7 0.4 -0.8 V -1.0 ±10 uA -1 uA -5 A 0.65 0.90 Ω 1.50 S -1.2 V 1.5 2.0 0.3 nC 0.35 5 10 15 25 nS 8 15 1.4 1.8 2022/09/28 Ver.4 Page 3 SPP1073 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2022/09/28 Ver.4 Page 4 SPP1073 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2022/09/28 Ver.4 Page 5 SPP1073 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2022/09/28 Ver.4 Page 6 SPP1073 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2022 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2022/09/28 Ver.4 Page 7 .


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