Document
SPP1073
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1073 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
FEATURES P-Channel
-30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-723 package design
PIN CONFIGURATION( SOT-723 )
PART MARKING
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SPP1073
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPP1073S72RGB
SOT-723
※ SPP1073S72RGB : Tape Reel ; Pb – Free, Halogen – Free
Part Marking 3
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate –Source Voltage
VGSS
±12
V
TA=25℃
-0.45
Continuous Drain Current(TJ=150℃)
ID
A
TA=80℃
-0.35
Pulsed Drain Current
IDM
-1.0
A
Continuous Source Current(Diode Conduction)
IS
-0.3
A
Power Dissipation
TA=25℃
0.27
PD
W
TA=70℃
0.16
Operating Junction Temperature
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
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SPP1073
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-24V,VGS=0V IDSS VDS=-24V,VGS=0V
TJ=55℃
ID(on) VDS≤ -4.5V,VGS =-5V
RDS(on) gfs
VGS=-4.5V,ID=-0.45A VGS=-2.5V,ID=-0.35A VGS=-1.8V,ID=-0.25A
VDS=-10V,ID=-0.25A
VSD IS=-0.15A,VGS=0V
Qg Qgs Qgd td(on) tr td(off) tf
VDS=-10V,VGS=-4.5V ID=-0.6A
VDD=-10V,RL=10Ω ID=-0.4A VGEN=-4.5V,RG=6Ω
Min. Typ Max. Unit
-30 -0.35
-0.7
0.4 -0.8
V -1.0 ±10 uA -1
uA -5
A 0.65 0.90 Ω 1.50
S -1.2 V
1.5 2.0
0.3
nC
0.35
5
10
15
25
nS
8
15
1.4 1.8
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SPP1073
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP1073
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP1073
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP1073
P-Channel Enhancement Mode MOSFET
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