SPP1073
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1073 is the P-Channel enhancement mode power field effect ...
SPP1073
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1073 is the P-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
FEATURES P-Channel
-30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-723 package design
PIN CONFIGURATION( SOT-723 )
PART MARKING
2022/09/28 Ver.4
Page 1
SPP1073
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPP1073S72RGB
SOT-723
※ SPP1073S72RGB : Tape Reel ; Pb – Free, Halogen – Free
Part Marking 3
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate –Source Voltage
VGSS
±12
V
TA=25℃
-0.45
Continuous Dr...