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SPN4868 Dataheets PDF



Part Number SPN4868
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN4868 DatasheetSPN4868 Datasheet (PDF)

SPN4868 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4868 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high efficiency and fast switching is required. FEATURES  60V/6A,RDS(ON)=2.

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SPN4868 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4868 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high efficiency and fast switching is required. FEATURES  60V/6A,RDS(ON)=21mΩ@VGS=10V  60V/4A,RDS(ON)=24mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP-8 package design APPLICATIONS  Motor Drive  Power Tools  LED Lighting PIN CONFIGURATION (SOP–8) PART MARKING 2020/03/26 Ver 2 Page 1 SPN4868 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN4868S8RGB SOP-8 ※ SPN4868S8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free Description Source Source Source Gate Drain Drain Drain Drain Part Marking SPN4868 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=100℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA RθJC Typical 60 ±20 6 3.6 24 6 1.47 -55/150 -55/150 62 2.8 Unit V V A A A W ℃ ℃ ℃/W ℃/W 2020/03/26 Ver 2 Page 2 SPN4868 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V, ID=250uA VGS(th) VDS=VGS, IDS=25uA IGSS IDSS RDS(on) VDS=0V, VGS=±20V VDS=60V,VGS=0V, TJ=25°C VDS=48V,VGS=0V, TJ=125°C VGS=10V, ID=6A VGS=4.5V, ID=4A gfs VDS=10V, ID=10A VSD IF=1A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=30V,VGS=10V, ID=15A VGS=0V,VDS=20V, F=1MHz (VDD=30V,ID=-1A, VGEN=10V,RG=6Ω) Min. Typ Max. Unit 60 V 1.2 1.8 2.5 ±100 nA 1 uA 10 17 21 20 24 mΩ 9 S 1 V 28 42 3.5 7 nC 6.5 10 1680 2440 115 170 pF 85 125 7.2 14 38 72 nS 34 65 8.2 16 2020/03/26 Ver 2 Page 3 SPN4868 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/26 Ver 2 Page 4 SPN4868 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/26 Ver 2 Page 5 SPN4868 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/03/26 Ver 2 Page 6 .


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