Document
SPN4868
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4868 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high efficiency and fast switching is required.
FEATURES 60V/6A,RDS(ON)=21mΩ@VGS=10V 60V/4A,RDS(ON)=24mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC current
capability SOP-8 package design
APPLICATIONS Motor Drive Power Tools LED Lighting
PIN CONFIGURATION (SOP–8)
PART MARKING
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SPN4868
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
ORDERING INFORMATION
Part Number
Package
SPN4868S8RGB
SOP-8
※ SPN4868S8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free
Description Source Source Source Gate Drain Drain Drain Drain
Part Marking SPN4868
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TC=25℃ TC=100℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case
Symbol VDSS VGSS
ID
IDM IS PD TJ TSTG RθJA RθJC
Typical 60
±20 6 3.6 24
6 1.47 -55/150 -55/150 62 2.8
Unit V V
A
A A W ℃ ℃ ℃/W ℃/W
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SPN4868
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V, ID=250uA
VGS(th) VDS=VGS, IDS=25uA
IGSS IDSS RDS(on)
VDS=0V, VGS=±20V
VDS=60V,VGS=0V, TJ=25°C VDS=48V,VGS=0V, TJ=125°C VGS=10V, ID=6A
VGS=4.5V, ID=4A
gfs VDS=10V, ID=10A
VSD IF=1A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=30V,VGS=10V, ID=15A
VGS=0V,VDS=20V, F=1MHz
(VDD=30V,ID=-1A, VGEN=10V,RG=6Ω)
Min. Typ Max. Unit
60 V
1.2 1.8 2.5 ±100 nA
1 uA
10
17
21
20
24 mΩ
9
S
1
V
28
42
3.5
7 nC
6.5
10
1680 2440
115 170 pF
85 125
7.2
14
38
72
nS
34
65
8.2
16
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SPN4868
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4868
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4868
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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