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SPN4868 Dataheets PDF



Part Number SPN4868
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN4868 DatasheetSPN4868 Datasheet (PDF)

SPN4868 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4868 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high efficiency and fast switching is required. FEATURES  60V/6A,RDS(ON)=2.

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SPN4868 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4868 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high efficiency and fast switching is required. FEATURES  60V/6A,RDS(ON)=21mΩ@VGS=10V  60V/4A,RDS(ON)=24mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP-8 package design APPLICATIONS  Motor Drive  Power Tools  LED Lighting PIN CONFIGURATION (SOP–8) PART MARKING 2020/03/26 Ver 2 Page 1 SPN4868 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN4868S8RGB SOP-8 ※ SPN4868S8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free Description Source Source Source Gate Drain Drain Drain Drain Part Marking SPN4868 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=100℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA RθJC Typical 60 ±20 6 3.6 24 6 1.47 -55/150 -55/150 62 2.8 Unit V V A A A W ℃ ℃ ℃/W ℃/W 2020/03/26 Ver 2 Page 2 SPN4868 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V, ID=250uA VGS(th) VDS=VGS, IDS=25uA IGSS IDSS RDS(on) VDS=0V, VGS=±20V VDS=60V,VGS=0V, TJ=25°C VDS=48V,VGS=0V, TJ=125°C VGS=10V, ID=6A VGS=4.5V, ID=4A gfs VDS=10V, ID=10A VSD IF=1A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=30V,VGS=10V, ID=15A VGS=0V,VDS=20V, F=1MHz (VDD=30V,ID=-1A, VGEN=10V,RG=6Ω) Min. Typ Max. Unit 60 V 1.2 1.8 2.5 ±100 nA 1 uA 10 17 21 20 24 mΩ 9 S 1 V 28 42 3.5 7 nC 6.5 10 1680 2440 115 170 pF 85 125 7.2 14 38 72 nS 34 65 8.2 16 2020/03/26 Ver 2 Page 3 SPN4868 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/26 Ver 2 Page 4 SPN4868 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/26 Ver 2 Page 5 SPN4868 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power .


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