Document
SPN4868
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4868 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high efficiency and fast switching is required.
FEATURES 60V/6A,RDS(ON)=21mΩ@VGS=10V 60V/4A,RDS(ON)=24mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC current
capability SOP-8 package design
APPLICATIONS Motor Drive Power Tools LED Lighting
PIN CONFIGURATION (SOP–8)
PART MARKING
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SPN4868
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
ORDERING INFORMATION
Part Number
Package
SPN4868S8RGB
SOP-8
※ SPN4868S8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free
Description Source Source Source Gate Drain Drain Drain Drain
Part Marking SPN4868
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TC=25℃ TC=100℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case
Symbol VDSS VGSS
ID
IDM IS PD TJ TSTG RθJA RθJC
Typical 60
±20 6 3.6 24
6 1.47 -55/150 -55/150 62 2.8
Unit V V
A
A A W ℃ ℃ ℃/W ℃/W
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SPN4868
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V, ID=250uA
VGS(th) VDS=VGS, IDS=25uA
IGSS IDSS RDS(on)
VDS=0V, VGS=±20V
VDS=60V,VGS=0V, TJ=25°C VDS=48V,VGS=0V, TJ=125°C VGS=10V, ID=6A
VGS=4.5V, ID=4A
gfs VDS=10V, ID=10A
VSD IF=1A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=30V,VGS=10V, ID=15A
VGS=0V,VDS=20V, F=1MHz
(VDD=30V,ID=-1A, VGEN=10V,RG=6Ω)
Min. Typ Max. Unit
60 V
1.2 1.8 2.5 ±100 nA
1 uA
10
17
21
20
24 mΩ
9
S
1
V
28
42
3.5
7 nC
6.5
10
1680 2440
115 170 pF
85 125
7.2
14
38
72
nS
34
65
8.2
16
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SPN4868
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4868
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4868
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power .