Document
SPN4852
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS DC/DC Converter Load Switch Synchronous Buck Converter SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control
FEATURES 150V/4.1A,RDS(ON)=88mΩ@VGS=10V 150V/2A,RDS(ON)=100mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
PIN CONFIGURATION(SOP–8)
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PART MARKING
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SPN4852
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN4852S8RGB
SOP-8
※ SPN4852S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃)
TA=25℃
Pulsed Drain Current
Avalanche Energy, Single Pulse (L=0.1mH , Tc=25℃)
Power Dissipation
TC=25℃ TA=25℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient (steady state)
Symbol VDSS VGSS ID IDM EAS
PD
TJ TSTG RθJc RθJA
Part Marking SPN4852
Typical 150
±20 4.1 20 40 5.0 2.5 -55/150 -55/150 25 50
Unit V V A A mJ
W ℃ ℃ ℃/W
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SPN4852
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=120V,VGS=0V TJ=25℃ IDSS VDS=120V,VGS=0V TJ=100℃
RDS(on)
VGS=10V,ID=4.1A VGS=4.5V,ID=2A
gfs VDS=5V,ID=10A
VSD IS=1A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr
td(off)
tf
VDS=75V, VgS=4.5V, ID=10A
VDS=25V,VGS=0V f=1MHz
VDD=75V, ID=10A,VGS=10V RG=3.3Ω
Min. Typ Max. Unit
150 V
1.2
2.5
±100 nA
1 uA
100
88 100
mΩ
33
S
1.0 V
25.1
8.8
nC
12.6
2280
110
pF
83 13
8.2
nS 25
11
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SPN4852
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4852
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SOP- 8
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SPN4852
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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