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SPN4852 Dataheets PDF



Part Number SPN4852
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN4852 DatasheetSPN4852 Datasheet (PDF)

SPN4852 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Syn.

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SPN4852 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control FEATURES  150V/4.1A,RDS(ON)=88mΩ@VGS=10V  150V/2A,RDS(ON)=100mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/27 Ver 2 PART MARKING Page 1 SPN4852 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4852S8RGB SOP-8 ※ SPN4852S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ Pulsed Drain Current Avalanche Energy, Single Pulse (L=0.1mH , Tc=25℃) Power Dissipation TC=25℃ TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient (steady state) Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJc RθJA Part Marking SPN4852 Typical 150 ±20 4.1 20 40 5.0 2.5 -55/150 -55/150 25 50 Unit V V A A mJ W ℃ ℃ ℃/W 2020/03/27 Ver 2 Page 2 SPN4852 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=120V,VGS=0V TJ=25℃ IDSS VDS=120V,VGS=0V TJ=100℃ RDS(on) VGS=10V,ID=4.1A VGS=4.5V,ID=2A gfs VDS=5V,ID=10A VSD IS=1A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=75V, VgS=4.5V, ID=10A VDS=25V,VGS=0V f=1MHz VDD=75V, ID=10A,VGS=10V RG=3.3Ω Min. Typ Max. Unit 150 V 1.2 2.5 ±100 nA 1 uA 100 88 100 mΩ 33 S 1.0 V 25.1 8.8 nC 12.6 2280 110 pF 83 13 8.2 nS 25 11 2020/03/27 Ver 2 Page 3 SPN4852 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/27 Ver 2 Page 4 SPN4852 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/27 Ver 2 SOP- 8 Page 5 SPN4852 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/03/27 Ver 2 Page 6 .


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