N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C976J3 Issued Date : 2014.09.17 Revised Date : 2014.10.02 Page No. : 1/9
N -Chan...
Description
CYStech Electronics Corp.
Spec. No. : C976J3 Issued Date : 2014.09.17 Revised Date : 2014.10.02 Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTE55N20J3
BVDSS ID@VGS=10V
RDSON(TYP)
VGS=10V, ID=11A VGS=7V, ID=5A
Features
Low Gate Charge Simple Drive Requirement Pb-free lead plating package
200V 26A 48mΩ 50mΩ
Equivalent Circuit
MTE55N20J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTE55N20J3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE55N20J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Cur...
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