MTE55N20J3

CYStech Electronics Corp. Spec. No. : C976J3 Issued Date : 2014.09.17 Revised Date : 2014.10.02 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTE55N20J3 BVDSS ID@VGS=10V RDSON(TYP) VGS=10V, ID=11A VGS=7V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package 200V 26A 48mΩ 50mΩ Equivalent Circuit MTE55N20J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE55N20J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE55N20J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur...