RU30J30M

RU30J30M Dual N-Channel Advanced Power MOSFET Features 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V Fast Switching Speed Low gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems DC/DC Converters Pin Description G2S2 S2 S2 G1D1D1D1 PDFN5*6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=4.5V) ID② Continuous Drain Current@TA(VGS=4.5V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 1 Dual N-Channel MOSFET Rating Unit TC=25°C 30 ±20 150 -55 to 150 20 V ...