Dual N-Channel Advanced Power MOSFET
RUH30J30M
Dual N-Channel Advanced Power MOSFET
Features
• 30V/30A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VG...
Description
RUH30J30M
Dual N-Channel Advanced Power MOSFET
Features
30V/30A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Applications
DC/DC Converters On board power for server Synchronous rectification
Pin Description
G2S2 S2 S2
G1D1D1D1 PDFN5*6
PIN1
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
ID② Continuous Drain Current@TA(VGS=10V)③
Maximum Power Dissipation@TC PD
Maximum Power Dissipation@TA③
Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2018
1
Dual N-Channel MOSFET
Rating
Unit
TC=25°...
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