RUH60100R

RUH60100R N-Channel Advanced Power MOSFET Features 60V/100A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V RDS (ON) =4.3mΩ(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications On board power for server Synchronous rectification GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 60 ±20 175 -55 to 175 75 ...