RUH1H100R

RUH1H100R N-Channel Advanced Power MOSFET Features 100V/100A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V Advanced HEFET® Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications Motor Drives Uninterruptible Power Supplies Synchronus Rectification in DC/DC and AC/DC Converters Pin Description GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Ene...