RUH8080H

RUH8080H N-Channel Advanced Power MOSFET Features 80V/80A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V RDS (ON) =6.5mΩ(Typ.)@VGS=4.5V Ultra Low On-Resistance High Switching Speed Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications Power Management. Switch Applications. Load switch SOP-8 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 1 N-Channel MOSFET Rating Unit TA=25°...