Document
RUH1H80M
N-Channel Advanced Power MOSFET
Features
• 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• LED backlighting • On board power for server • Synchronous rectification
Pin Description
D D DD
SSS G
PIN1
PDFN5060
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
ID② Continuous Drain Current@TA(VGS=10V)③
Maximum Power Dissipation@TC PD
Maximum Power Dissipation@TA③
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100 ±25 150 -55 to 150 50
V
°C °C A
TC=25°C
200 A
TC=25°C
8.