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RUH1H80M Dataheets PDF



Part Number RUH1H80M
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RUH1H80M DatasheetRUH1H80M Datasheet (PDF)

RUH1H80M N-Channel Advanced Power MOSFET Features • 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • LED backlighting • On board power for server • Synchronous rectification Pin Description D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS V.

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RUH1H80M N-Channel Advanced Power MOSFET Features • 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • LED backlighting • On board power for server • Synchronous rectification Pin Description D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S N-Channel MOSFET Rating Unit TC=25°C 100 ±25 150 -55 to 150 50 V °C °C A TC=25°C 200 A TC=25°C 8.


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