RUH30100M

RUH30100M N-Channel Advanced Power MOSFET Features 30V/95A, RDS (ON) =2.7mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Converters On board power for server Synchronous rectification Pin Description D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S N-Channel MOSFET Rating Unit TC=25°C 30 ±20 150 -55 to 150 50 V °C °C A TC=25°C 360 A TC=25°C 95 ...