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VS-15ETX06S-M3, VS-15ETX06-1-M3
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
2
1
31
2
D2PAK (TO-263AB)
3
Base
Cathode
2
TO-262AA
2
13
N/C Anode
VS-15ETX06S-M3
1
N/C
3
Anode
VS-15ETX06-1-M3
PRIMARY CHARACTERISTICS
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Package
15 A
600 V
1.5 V
18 ns
175 °C
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 133 °C
TJ = 25 °C
MAX.
600
15
170
30
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
VBR,
VR
VF
IR = 100 μA
IF = 15 A
IF = 15 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 600 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
TYP.
-
2.3
1.5
0.1
40
20
8.0
MAX.
-
3.2
1.8
50
300
-
-
UNITS
V
μA
pF
nH
Revision: 24-Oct-17
1 Document Number: 96302
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
