Dual N-Channel MOSFET
Analog Power
AMA930N
Dual N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impe...
Description
Analog Power
AMA930N
Dual N-Channel 30-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
VDS (V) 30
PRODUCT SUMMARY rDS(on) (mΩ)
63 @ VGS = 4.5V 110 @ VGS = 2.5V
ID(A) 4.4 3.4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±12
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
4.4 3.5 ±10 2.2
Power Dissipation a
TA=25°C TA=70°C
PD
2.1 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol RθJA
Maximum 60 110
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse wi...
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