Dual N-Channel MOSFET
Analog Power
AMA922N
Dual N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impe...
Description
Analog Power
AMA922N
Dual N-Channel 20-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits
VDS (V) 20
PRODUCT SUMMARY rDS(on) (mΩ)
23 @ VGS = 4.5V 33 @ VGS = 2.5V
ID (A) 6.6 5.6
DFN2x2-6L Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
6.6 5.3 25 2.1
Power Dissipation a
TA=25°C TA=70°C
PD
1.5 0.95
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
50 105
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b....
Similar Datasheet