AMA922N

Analog Power AMA922N Dual N-Channel 20-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 23 @ VGS = 4.5V 33 @ VGS = 2.5V ID (A) 6.6 5.6 DFN2x2-6L Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 6.6 5.3 25 2.1 Power Dissipation a TA=25°C TA=70°C PD 1.5 0.95 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 50 105 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b....