AMA921P

Analog Power AMA921P Dual P-Channel 20-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 79 @ VGS = -4.5V 110 @ VGS = -2.5V ID(A) -4.2 -3.6 DFN2x2-6L P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -4.2 -3.3 -10 -2.3 Power Dissipation a TA=25°C TA=70°C PD 2.1 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol RθJA Maximum 60 110 Units °C/W Notes a. Surface...