AM1960NE

Analog Power AM1960NE Dual N-Channel 60-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: DC/DC Conversion Circuits Motor Drives VDS (V) 60 PRODUCT SUMMARY rDS(on) (Ω) 2 @ VGS = 10V 3 @ VGS = 4.5V ID (A) 0.32 0.26 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 0.32 0.27 2 0.5 Power Dissipation a TA=25°C TA=70°C PD 0.3 0.21 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 415 460 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature ©...