AM1360NE Datasheet

AM1360NE N-Channel MOSFET

Analog Power AM1360NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-po.

Features

25oC TA=70oC ID 60 V ±20 1.7 1.4 A IDM ±20 IS 1.6 A TA=25oC TA=70oC PD 0.34 W 0.22 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maximum Units RT HJA 100 oC/W 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM1360NE_A Analog Power AM1360NE SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Limits Unit Min Typ Max Gate-Threshold Voltage Gate-Bo.