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AM2359PE Dataheets PDF



Part Number AM2359PE
Manufacturers Analog Power
Logo Analog Power
Description P-Channel MOSFET
Datasheet AM2359PE DatasheetAM2359PE Datasheet (PDF)

Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2359PE VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 700 @ VGS = -10V 800 @ VGS = -4.5V ID (A) -1.2 -1.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 C.

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Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM2359PE VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 700 @ VGS = -10V 800 @ VGS = -4.5V ID (A) -1.2 -1.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -1.2 -0.9 -5 -1.5 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pul.


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