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AM2332N Dataheets PDF



Part Number AM2332N
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM2332N DatasheetAM2332N Datasheet (PDF)

Analog Power AM2332N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 20 0.058 @ VGS = 4.5 V 0.082 @ VGS = 2.5V ID (A) 4.7 4.0 • Low rDS(.

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Analog Power AM2332N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 20 0.058 @ VGS = 4.5 V 0.082 @ VGS = 2.5V ID (A) 4.7 4.0 • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOT-23 saves board space • Fast switching speed • High performance trench technology G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 20 ±12 V 4.7 3.8 A ±20 Continuous Source Current (Diode Conduction)a I.


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