AM2358NE

Analog Power AM2358NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 60 0.092 @ VGS = 10 V 3.1 0.107 @ VGS = 4.5V 2.9 SOT-23 D Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe Top View G G SOT-23 saves board space Fast switching speed High performance trench technology ESD ProtectedS 2000V D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ±20 Continuous Drain Currenta TA=25oC TA=70oC ID 2.8 1.8 A Pulsed Drain Curr...