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AM2370N Dataheets PDF



Part Number AM2370N
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM2370N DatasheetAM2370N Datasheet (PDF)

Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters AM2370N VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 1.5 1.3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Volt.

  AM2370N   AM2370N



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Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters AM2370N VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 1.5 1.3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 1.5 1.2 10 1.6 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol RθJA Maximum 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 .


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