AM2370N

Analog Power N-Channel 100-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters AM2370N VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 1.5 1.3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 1.5 1.2 10 1.6 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol RθJA Maximum 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 ...