Document
Analog Power
AM3428N
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Low Gate Charge
• Fast Switch
• Miniature TSOP-6 Surface Mount Package Saves Board Space
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
20 0.025 @ VGS = 4.5 V 0.035 @ VGS = 2.5V
1 2 3
ID (A) 7.4 6.2
6 5 4
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
20 ±8
V
7.4 6.0 A
±20
Continuous Source Current (Diode Conduction)a
.