Document
Analog Power
AM3434N
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
30 0.032 @ VGS= 4.5 V 0.044 @ VGS= 2.5V
ID (A) 6.0 5.0
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
16 25 34
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta
Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range.