AM3454N

Analog Power N-Channel 30-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits AM3454N VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 58 @ VGS = 10V 82 @ VGS = 4.5V ID (A) 4.8 4.1 TSOP-6 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 4.8 3.9 20 2.6 Power Dissipation a TA=25°C TA=70°C PD 2 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 62.5 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited b...