Document
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe TSOP-6 saves board space
• Fast switching speed • High performance trench technology
AM3441P
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
90 @ VGS = -4.5V
-20 130 @ VGS = -2.5V
150 @ VGS = -1.8V
ID (A) -2.9 -2.5 -2.3
16 25 34
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
-20 V ±12 -2.9 -2.4 A ±16
Continuous Source Curr.