Document
Analog Power
AM3530C
N & P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives
VDS (V) 30
-30
PRODUCT SUMMARY rDS(on) (mΩ)
28 @ VGS = 4.5V 40 @ VGS = 2.5V 70 @ VGS = -4.5V 100 @ VGS = -2.5V
ID (A) 7.1 5.9 -4.5 -3.7
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
Drain-Source Voltage
VDS 30 -30
Gate-Source Voltage
VGS ±12 ±12
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
7.1 -4.5 5.6 -3.5 20 -20 2.8 -2.5
Power Dissipation a
TA=25°C TA=70°C
PD
2.1 1.3
2.1 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
62.5 110
Units °C/W
.