Analog Power
AM3826N
N-Channel 20-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
MOSFETPRODUCTSUMMARY
VDS (V)
rDS(on) (OHM)
ID (A)
20 0.047 @VGS = -4.5V ±4.1
0.055 @VGS = -2.5V ±3.8
SCHOTTKYPRODUCTSUMMARY
VKA (V)
20
Vf (V)
Diode ForwardVoltage
0.48V@1.0A
IF (A)
1.0
TSOP-6
Top View
DK
A1
S2
G3
6K
G
5 N/C
SA
4 D N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
VDS
20
VKA 20 V
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ=150oC) (MOSFET)a
TA=25oC
TA=70oC
Pulsed Drain Current (MOSFET)b
Continuous Source Current (MOSFET Diode Conduction)a
VGS
ID
IDM
IS
±8
±4.1
±3.3
±8
1.05
A
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
MaximumPower Dissipation (MOSFET)a
MaximumPower Dissipation (Schottky)a
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
TA=25oC
TA=70oC
IF
IFM
PD
TJ, Tstg
0.5
8
1.15
0.7
1.0
0.6
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RthJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Typ
93
130
Max
110
150
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM3826_A
