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Analog Power
AM3906N
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature TSOP-6 Surface Mount Package Saves Board Space
• Very fast switching
• Lower gate charge (2.2 nC)
PRODUCT SUMMARY
VDS (V) 30
rDS(on) (OHM) 0.099 @ VGS = 10 V 0.142 @ VGS = 4.5V
1 2 3
ID (A) 2.5 2.0
6 5 4
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage
VDS 30 V VGS ±20
Continuous Drain Currenta
TA=25oC TA=70oC
ID
2.5 2A
Pulsed Drain Currentb
IDM 10
Continuous Source Curre.