AM7000N

Analog Power N-Channel 200-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AM7000N VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 295 @ VGS = 10V 340 @ VGS = 5.5V ID (A) 3 2.7 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 3 2.2 20 4.6 Power Dissipation a TA=25°C TA=70°C PD 3.5 2 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 35 81 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse wi...