Document
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives
AM7330N
VDS (V) 30
PRODUCT SUMMARY rDS(on) (mΩ)
20 @ VGS = 10V 32 @ VGS = 4.5V
ID (A) 19 15
DFN3x3-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC=25°C
19
Continuous Drain Current
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TC=70°C TA=25°C TA=70°C
ID
IDM IS
15 11a 8a 40
4.5
TC=25°C
11
Power Dissipation
TC=70°C TA=25°C TA=70°C
PD
7 3.5a 2a
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State Steady State
Symbol RθJA RθJC
Maximum 35 81 11
Units °C/W
Notes a. Su.