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AM4407PE Dataheets PDF



Part Number AM4407PE
Manufacturers Analog Power
Logo Analog Power
Description P-Channel MOSFET
Datasheet AM4407PE DatasheetAM4407PE Datasheet (PDF)

Analog Power P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM4407PE VDS (V) -30 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = -10V 13 @ VGS = -4.5V ID (A) -16 -13 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Contin.

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Analog Power P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM4407PE VDS (V) -30 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = -10V 13 @ VGS = -4.5V ID (A) -16 -13 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -16 -13 -50 -4.9 Power Dissipation a TA=25°C TA=70°C PD 3.1 2.2 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 40 80 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width.


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