N-Channel MOSFET
Analog Power
N-Channel 250-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Description
Analog Power
N-Channel 250-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
AM4304N
VDS (V) 250
PRODUCT SUMMARY rDS(on) (Ω)
1.6 @ VGS = 10V 1.8 @ VGS = 6V
ID (A) 1.2 1.1
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 250
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
1.2 1 5 3.7
Power Dissipation a
TA=25°C TA=70°C
PD
3.1 2.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
40 80
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width ...
Similar Datasheet