N-Channel MOSFET
Analog Power
N-Channel 150-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Description
Analog Power
N-Channel 150-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits
AM4398N
VDS (V) 150
PRODUCT SUMMARY rDS(on) (mΩ)
89 @ VGS = 10V 99 @ VGS = 5.5V
ID (A) 4.9 4.6
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
4.9 4.1 20 4.5
Power Dissipation a
TA=25°C TA=70°C
PD
3.1 2.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
40 80
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse wid...
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