Document
Analog Power
N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits
AM4420N
VDS (V) 20
PRODUCT SUMMARY rDS(on) (mΩ)
2.3 @ VGS = 4.5V 2.7 @ VGS = 2.5V
ID (A) 30 28
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
30 25 150 4.1
Power Dissipation a
TA=25°C TA=70°C
PD
3.1 2.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
40 80
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by ma.